钟妮

2004.9-2007.9， 博士，     日本国立奈良先端科学技术大学院大学 

                日本国费奖学金，中国国家优秀自费留学生奖

2000.9-2003.7， 硕士，     中国科学院上海硅酸盐研究所

2012.03      至今， 副研究员/研究员/教授   5357cc拉斯维加斯

2008.04 - 2012.03,  特别研究员,        日本产业技术综合研究所

长期从事铁电氧化物的研究工作。2003年获中国科学院上海硅酸盐研究所硕士学位，2007年获日本奈良先端科学技术大学院大学博士学位，师从日本著名铁电物理学家塩崎忠（Shiosaki Tadashi）。近年的研究方向主要集中在氧化物薄膜和低维铁电器件的制备、电学及多功能探针显微镜表征方面。目前为止，在 Nature Commu.,Sci. Adv. Adv. Funct. Mater., Appl. Phys. Lett., IEEE Electr. Device L.等国际学术刊物上发表论文百余篇，多篇入选高被引论文。曾获日本文部科学省博士研究生奖学金以及2006 年国家优秀自费留学生奖学金。

新型微纳电子器件

扫描探针显微镜

利用一套功能强大的扫描探针显微镜实现对材料的新颖物理特性

包括微观铁电性、磁性及输运特性的实时表征

组内研究进展

Ø  2024年10月 “Ambient Moisture-Induced Self Alignment of Polarization in Ferroelectric Hafnia” Advanced Science 2410354(2024).

水对铪基铁电极化翻转及稳定性的影响

Ø  2024年5月 “Spatial evolution of the proton-coupled Mott transition  in correlated oxides for neuromorphic computing” Science Advances 10, eadk9928 (2024).

生物突触中基于习惯化和敏化学习行为的树状分层记忆特性

Ø  2024年3月 “2D Janus Polarization Functioned by Mechanical Force” Advanced Materials 36, 2403929 (2024).

利用微区应力的精准调控，实现了单层Janus-GeSe结构

Ø  2023年12月 祝贺魏鹿奇同学在“第十九届电介质物理、材料与应用学术会议”暨“第二十一届全国电子元件与材料学术大会”中获得优秀海报奖。

Ø  2022年6月“Mechanical Polarization Switching in Hf0.5Zr0.5O2 Thin Film” Nano Letters 22  22, 4792-4799, (2022).

铪基铁电薄膜的本征挠曲电效应，实现基于力诱导极化反转

Ø  2022年1月“Electric-Field-Induced Room Temperature Antiferroelectric-Ferroelectric Phase Transition In Van Der Waals Layered GeSe”ACS Nano 16, 1308(2022) 

基于电场诱导的GeSe中的反铁-铁电相变电场诱导的GeSe中的反铁-铁电相变

Ø  2021年3月“A Flexible Mott Synaptic Transistor for Nociceptor Simulation and Neuromorphic Computing”Advanced Functional Materials 2101099, 31 (2021) 

柔性全透明氧化物突触器件及其在痛觉感知器中的应用

Ø  2021年2月“Ion adsorption-induced reversible polarization switching of a van der Waals layered ferroelectric” Nature Communication 655, 12 (2021) 

利用非电场实现了低维铁电CIPS中极化超低功耗反转

专业英语  Discipline English

微电子工艺 Microelectronic Processing

光电材料与器件设计性实验（一）Design Experiments of Optoelectronics（I）

主持及参与项目

1）国家自然科学基金面上项目 2025年-2028年

二维材料莫尔铁电的物理起源及调控研究 主持

2）国家重点研发计划2023年-2027年

高能效可重构铁电存算器件及阵列            参与

3）国家自然科学基金面上项目 2021年-2024年

铁电薄膜的畴结构演化及其对突触可塑性的调控研究  主持

4) 国家自然科学基金重点项目 2022年-2026年

二元VI族铁谷体铁性的起源、耦合及多场调控研究      参与

5）上海市自然科学基金 2020年-2023年

基于BaTiO3的新型铁电神经器件的畴动力学研究          主持

6) 国家自然科学基金青年项目 2014年-2016年

BiFeO3外延薄膜受铁电极化调控阻变效应的研究          主持

7)上海市科委项目 2013年-2015年

铁电阻变存储效应的研究  主持

8）上海市科委创新2017-2019年

基于铁电效应的存算一体化和神经形态计算         参与

9）上海市科委创新2019-2022年

铁电人工突触固态器件      参与

41Xu, D. D.; Ma, R. R.; Zhao, Y. F.; Guan, Z.; Zhong, Q. L.; Huang, R.; Xiang, P. H.; Zhong, N.; Duan, C. G., Unconventional out-of-plane domain inversion via in-plane ionic migration in a van der Waals ferroelectric. Journal of Materials Chemistry C 2020, 8 (21), 6966-6971.

全文链接：https://doi.org/10.1039/d0tc01620a

40 Xu, D. D.; Ma, R. R.; Zhang, Y. S.; Deng, X.; Zhang, Y. Y.; Zhu, Q. X.; Zhong, N.; Tang, X. D.; Xiang, P. H.; Duan, C. G., Electrostatic-doping-controlled phase separation in electron-doped manganites. Applied Physics Letters 2020, 117 (13), 132405. (Featured Article)

全文链接：https://doi.org/10.1063/5.0024431

39 Ma, R. R.; Xu, D. D.; Guan, Z.; Deng, X.; Yue, F. Y.; Huang, R.; Chen, Y.; Zhong, N.; Xiang, P. H.; Duan, C. G., High-speed ultraviolet photodetectors based on 2D layered CuInP2S6 nanoflakes. Applied Physics Letters 2020, 117 (13), 131102.

全文链接：https://doi.org/10.1063/5.0022097

38 Liu, Y.-D.; Hu, C.-Z.; Wang, J.-J.; Zhong, N.; Xiang, P.-H.; Duan, C.-G., Reversible transition of filamentary and ferroelectric resistive switching in BaTiO3/SmNiO3 heterostructures. Journal of Materials Chemistry C 2020, 8 (17), 5815-5820.

全文链接：https://doi.org/10.1039/d0tc00676a

37 Yang, N.; Hu, C. Z.; Ren, Z. Q.; Bao, S. Y.; Tian, B. B.; Yue, F. Y.; Xiang, P. H.; Zhong, N.; Duan, C. G.; Chu, J. H., Nonvolatile Negative Optoelectronic Memory Based on Ferroelectric Thin Films. Acs Applied Electronic Materials 2020, 2, 1035-1040.

全文链接：https://dx.doi.org/10.1021/acsaelm.0c00066

36 Guan, Z.; Hu, H.; Shen, X.; Xiang, P.; Zhong, N.*; Chu, J.; Duan, C., Recent Progress in Two-Dimensional Ferroelectric Materials. Advanced Electronic Materials 2020, 6, 1900818.

全文链接：https://doi.org/10.1002/aelm.201900818

35 Deng, X.; Zhao, Y. F.; Zhong, N.; Yue, F. Y.; Huang, R.; Peng, H.; Tang, X. D.; Xiang, P. H.*; Chu, Y. H.; Duan, C. G., Proton mediated Phase Control in Flexible and Transparent Mott Transistors. Advanced Electronic Materials 2020, 6, 1900742.

全文链接：https://doi.org/10.1002/aelm.201900742

34 Bao, S.-Y.; Deng, X.; Mao, F.; Zhong, N.; Yue, F.-Y.; Sun, L.; Xiang, P.-H.*; Duan, C.-G., Ultra-flat ITO films on mica for high temperature transparent flexible electrodes. Ceramics International 2020, 46 (2), 2268-2272.

全文链接：https://doi.org/10.1016/j.ceramint.2019.09.215

33 Yang, N.; Yuan, Y.; Guan, Z.; Zhong, N.; Chen, W. X.; Qi, R. J.; Zhang, Y. Y.; Huang, R.; Tang, X. D.; Xiang, P. H.*; Duan, C. G.; Chu, J. H., Structure dependence of ferroelectricity in high quality BiMnO3 epitaxial films. Physical Review Materials 2019, 3 (5), 054402.

全文链接：https://doi.org/10.1103/PhysRevMaterials.3.054402

32 Yang, N.; Ren, Z.-Q.; Hu, C.-Z.; Guan, Z.; Tian, B.; Zhong, N.*; Xiang, P.-H.; Duan, C.-G.; Chu, J., Ultra-wide temperature electronic synapses based on self-rectifying ferroelectric memristors. Nanotechnology 2019, 30, 464001.

全文链接：https://doi.org/10.1088/1361-6528/ab3c3d

31 Xu, D. D.; Deng, X.; Zhao, Y. F.; Ma, R. R.; Zhong, N.*; Huang, R.; Peng, H.; Xiang, P. H.*; Duan, C. G., Hydrogenation Dynamics of Electrically Controlled Metal-Insulator Transition in Proton gated Transparent and Flexible WO3 Transistors. Advanced Functional Materials 2019, 29, 1902497. 

全文链接：https://doi.org/10.1002/adfm.201902497

30 Tian, B. B.; Liu, L.; Yan, M. G.; Wang, J. L.; Zhao, Q. B.; Zhong, N.; Xiang, P. H.; Sun, L.; Peng, H.; Shen, H.; Lin, T.; Dkhi, B.; Meng, X. J.; Chu, J. H.; Tang, X. D.; Duan, C. G., A Robust Artificial Synapse Based on Organic Ferroelectric Polymer. Advanced Electronical Materials 2019, 5 (1), 1800600.

29 Ren, Z.-Q.; Liu, Y.-D.; Bao, S.-Y.; Yang, N.; Zhong, N.*; Tang, X.-D.; Xiang, P.-H.; Duan, C.-G., Probing the origins of electroresistance switching behavior in ferroelectric thin films. Applied Physics Letters 2019, 115 (24), 242901.

全文链接：https://doi.org/10.1063/1.5119970

28 Liu, H.; Wang, C.; Han, G.; Li, J.; Peng, Y.; Liu, Y.; Wang, X.; Zhong, N.; Duan, C.; Wang, X., ZrO 2 Ferroelectric FET for Non-volatile Memory Application. IEEE Electron Device Letters 2019, 40 (9), 1419-1422.

27 Li, B.; Ren, Z.; Zhong, N.; Xie, W., Highly linear polarized photoluminescence from a rippled WSe 2 monolayer. Optics express 2019, 27 (9), 12436-12442.

26 Jiang, C.; Zhang, Y.; Tian, B.; Luo, C.; Zhong, N.; Wang, J.; Meng, X.; Peng, H.; Duan, C.-G.; Chu, J., Efficient two-terminal artificial synapse based on a network of functionalized conducting polymer nanowires. Journal of Materials Chemistry C 2019, 7 (32), 9933-9938.

25 Jia, M. X.; Ren, Z. Q.; Liu, Y. D.; Cheng, Y.; Huang, R.; Xiang, P. H.; Tang, X. D.; Tian, B. B.; Zhong, N.*; Duan, C. G., Ferroelectric polarization-controlled resistive switching in BaTiO3/SmNiO3 epitaxial heterostructures. Applied Physics Letters 2019, 114 (10), 102901.

全文链接：https://doi.org/10.1063/1.5066032

24 Guan, Z.; Yang, N.; Ren, Z. Q.; Zhong, N.*; Huang, R.; Chen, W. X.; Tian, B. B.; Tang, X. D.; Xiang, P. H.*; Duan, C. G.; Chu, J. H., Mediation in the second-order synaptic emulator with conductive atomic force microscopy. Nanoscale 2019, 11 (18), 8744-8751. 

全文链接：https://doi.org/10.1039/c8nr09662g

23 Xiang, P.-H.; Zhong, N.#; Sun, L.; Tang, X.; Duan, C.-G., Tailoring colossal magnetoresistance and magnetoresistive memory effect by two-dimension-like phase competition in electron-doped manganite superlattices. Journal of Physics D: Applied Physics 2018, 51, 275304.

全文链接：https://doi.org/10.1088/1361-6463/aac86c

22 Shen, P.; Guan, Z.; Zhong, N.; Xiang, P. H.; Wang, R. B.; Bao, Q. Y.; Yang, P. X.; Sun, L.; Duan, C. G.; Chu, J. H., Leakage mechanisms of double-perovskite Bi2FeMnO6 epitaxial thin films. Journal of Physics D-Applied Physics 2018, 51 (4), 045304.

21 Huang, X.; Jiang, K. A.; Niu, Y. R.; Wang, R. Z.; Zheng, D. Y.; Dong, A. H.; Dong, X. Y.; Mei, C. L.; Lu, J.; Liu, S.; Gan, Z. K.; Zhong, N.; Wang, H., Configurable ultra-low operating voltage resistive switching between bipolar and threshold behaviors for Ag/TaOx/Pt structures. Applied Physics Letters 2018, 113 (11), 112103.

20 Wang, Y. Q.; Song, Y. X.; Tong, W. Y.; Zhang, Y. Y.; Qi, R. J.; Xiang, P. H.; Huang, R.; Zhong, N.; Lin, H. C.; Tang, X. D.; Peng, H.; Duan, C. G., Electric field control of magnetism in nickel with coaxial cylinder structure at room temperature by electric double layergating. Journal of Materials Chemistry C 2017, 5 (40), 10609-10614.

19 Wang, Y. Q.; Fang, M. J.; Tian, B. B.; Xiang, P. H.; Zhong, N.; Lin, H. C.; Luo, C. H.; Peng, H.; Duan, C. G., Transparent PVDF-TrFE/Graphene Oxide Ultrathin Films with Enhanced Energy Harvesting Performance. Chemistryselect 2017, 2 (26), 7951-7955. 

18 Wang, J. W.; Luo, Q. Q.; Luo, C. H.; Lin, H. C.; Qi, R. J.; Zhong, N.; Peng, H., High-performance supercapacitor electrode based on a nanocomposite of polyaniline and chemically exfoliated MoS2 nanosheets. Journal of Solid State Electrochemistry 2017, 21 (7), 2071-2077.

17 Jiang, Z.-Z.; Guan, Z.; Yang, N.; Xiang, P.-H.*; Qi, R.-J.; Huang, R.; Yang, P.-X.; Zhong, N.*; Duan, C.-G., Epitaxial growth of BiFeO3 films on SrRuO3/SrTiO3. Materials Characterization 2017, 131, 217-223.

全文链接：http://dx.doi.org/10.1016/j.matchar.2017.07.009

16 Jiang, C. L.; Zhong, N.; Luo, C. H.; Lin, H. C.; Zhang, Y. Y.; Peng, H.; Duan, C. G., (Diisopropylammonium)(2)MnBr4: a multifunctional ferroelectric with efficient green-emission and excellent gas sensing properties. Chemical Communications 2017, 53 (44), 5954-5957.

15 Guan, Z.; Jiang, Z.-Z.; Tian, B.-B.; Zhu, Y.-P.; Xiang, P.-H.*; Zhong, N.*; Duan, C.-G.; Chu, J.-H., Identifying intrinsic ferroelectricity of thin film with piezoresponse force microscopy. AIP Advances 2017, 7 (9), 095116.

全文链接：http://dx.doi.org/10.1063/1.4999199

14 Chen, B.-J.; Yang, N.; Zhong*, N.; Tang, X.-D.; Yang, P.-X.; Xiang*, P.-H.; Duan, C.-G., Selective growth of Ruddlesden-Popper strontium iridate epitaxial films by controlling oxygen partial pressure in pulsed laser deposition. Materials Letters 2017, 202, 96–98.

全文链接：http://dx.doi.org/10.1016/j.matlet.2017.05.063

13 Chen, B. J.; Sun, Y.; Yang, N.; Zhong, N.*; Zhang, Y. Y.; Bai, W.; Sun, L.; Tang, X. D.; Yang, P. X.; Xiang, P. H.*; Duan, C. G., Electronic phase diagram of oxygen-deficient SmNiO3-d epitaxial thin films. Journal of Physics D-Applied Physics 2017, 50 (23), 235302.

全文链接：https://doi.org/10.1088/1361-6463/aa6de7

12 Zhang, Y.; Dong, W.; Qi, R.; Huang, R.; Yang, J.; Bai, W.; Zhong, N.; Chen, Y.; Wang, G.; Dong, X.; Technology, Large room-temperature magnetoresistance in epitaxial La 0.7 Ca 0.25 Sr 0.05 MnO 3 thin films prepared by sol-gel method. Journal of Sol-Gel Science Technology2017, 78(3), 576.

11 Sun, Y.; Zhong, N.*; Zhang, Y. Y.; Qi, R. J.; Huang, R.; Tang, X. D.; Yang, P. X.; Xiang, P. H.; Duan, C. G., Structure and electrical properties of epitaxial SrRuO3 thin films controlled by oxygen partial pressure. Journal of Applied Physics 2016, 120 (23), 235108.

全文链接：https://aip.scitation.org/doi/10.1063/1.4972477

10 Zhong, N.#; Xiang, P. H.; Zhang, Y. Y.; Wu, X.; Tang, X. D.; Yang, P. X.; Duan, C. G.; Chu, J. H., Polarization fluctuation behavior of lanthanum substituted Bi4Ti3O12 thin films. Journal of Applied Physics 2015, 118 (10), 104102.

全文链接：http://dx.doi.org/10.1063/1.4930041

9 Xiang, P. H.*; Zhong, N.#; Duan, C. G.; Tang, X. D.; Hu, Z. G.; Yang, P. X.; Zhu, Z. Q.; Chu, J. H., Strain controlled metal-insulator transition in epitaxial NdNiO3 thin films. Journal of Applied Physics 2013, 114 (24), 243713.

全文链接：http://dx.doi.org/10.1063/1.4858455

8 Zhong, N.; Cao, J. J.; Shima, H.; Akinaga, H., Effect of Annealing Temperature on TiO2-Based Thin-Film-Transistor Performance. IEEE Electron Device Letters 2012, 33 (7), 1009-1011.

全文链接：https://ieeexplore.ieee.org/abstract/document/6199956

7 Zhong, N.; Shima, H.; Akinaga, H., Improvement of Rectifying Property in Pt/TiOx/Pt by Controlling Oxidization of TiOx Layer. Japanese Journal of Applied Physics 2011, 50 (4), 04DH04.

6 Zhong, N.; Shima, H.; Akinaga, H., Mechanism of the performance improvement of TiO2-x-based field-effect transistor using SiO2 as gate insulator (vol 1, 032167, 2011). AIP Advances 2011, 1 (4), 032167.

5 Zhong, N.; Shima, H.; Akinaga, H. J. A. P. L., Rectifying characteristic of Pt/TiO x/metal/Pt controlled by electronegativity. Applied Physics Letters 2010, 96 (4), 042107.

4 Zhong, N.; Shima, H.; Akinaga, H., Transient Current Study on Pt/TiO2-x/Pt Capacitor. Japanese Journal of Applied Physics 2010, 49 (4), 04DJ15.

3 Zhong, N.; Shima, H.; Akinaga, H., Switchable Pt/TiO2-x/Pt Schottky Diodes. Japanese Journal of Applied Physics 2009, 48 (5), 05DF03.

2 Zhong, N.; Shiosaki, T., Dielectric behavior of Bi3.25La0.75Ti3O12 ferroelectric film. Journal of Applied Physics 2006, 100 (3), 034107.

1 Zhong, N.; Okamura, S.; Uchiyama, K.; Shiosaki, T., Single-ionized-oxygen-vacancy-related dielectric relaxation in Bi3.25La0.75Ti3O12 ferroelectric films.

2006 年国家优秀自费留学生奖学金

日本文部科学省博士研究生奖学金